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 SBH52414x FSAN
BIDITM Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode
* Designed for applications in passive-optical networks according FSAN, ITU-G.983 * Suitable for ONU applications, 155 Mbit/s and 622 Mbit/s downstream bitrate, Class B and Class C * Uncooled 1300 nm FP Laser Diode with Multi-Quantum Well structure * Ternary Moniordiode at rear laser mirror for monitoring and control of radiant power * Integrated Wavelength Division Multiplexer * InGaAs/InP-PIN-photodiode with 1300 nm blocking filter * Hermetically sealed subcomponents, similar to TO 18 * With singlemode fiber pigtail
Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Symbol Value - 40 ... + 85 - 40 ... + 85 260 Unit C C C
TC Tstg TS
Laser Diode Direct forward current Radiant power CW Reverse Voltage
Symbol
Value 120 4 2
Unit mA mW V
IF max Popt max VR max
Siemens Semiconductors
page(1/5)
1998-08-21
SBH52414x FSAN
Monitor Diode Reverse Voltage Forward Current
Symbol
Value 10 2
Unit V mA
VR max IF max
PIN Photodiode Forward current Reverse voltage Maximum optical power into the optical port
Symbol
Value 2 10 3
Unit mA V mW
IF max VR
Pport max
Characteristics: All optical data refer to the optical port at - 40 to + 85 C Package-Temperature. Laser Diode Optical output power (average) Optical output power (peak) Emission wavelength center of range (Popt = 1 mW) Spectral Width (RMS, Popt = 1 mW) Threshold current Forward voltage (Popt = 1 mW) Radiant power at Ith Slope efficiency Variation of 1st derivative of P/I (0.1 to 2.0 mW) Differential series resistance (Popt = 1 mW) Rise and fall time (10% - 90%) Temperature coefficient of wavelength Symbol Min 1 2 1260 - 2 - - 35 - 30 - - - Max - - 1360 5.8 45 1.5 50 150 30 8 0.5 0.5 Unit mW mW nm nm mA V W mW/A % ns nm/K
Popt av Popt peak

Ith VF Pth S
dP/dI
rS tr, tf TC
Siemens Semiconductors
page(2/5)
1998-08-21
SBH52414x FSAN
Monitor-Diode Dark current, VR = 5 V, Popt = 0 Photocurrent, Popt = 1 mW Capacitance, VR= 5V, f =1MHz Tracking error, VR= 5V, (see note 1)
Symbol
Min - 100 - -1
Max 0.5 1000 10 1
Unit A A pF dB
IR IP C5 TE
Receiver-Diode Spectral sensitivity = 1550 nm, VR = 5 V Rise and fall time (10% - 90%) RL = 50 , VR = 5 V, = 1310nm, Popt = 100 W Total capacitance VR = 5 V, f = 1 MHz Dark current VR = 5 V, Popt = 0
Symbol
Min 0.65 -
Max 1.0 0.5
Unit A/W ns
S1550 tr; tf
C2 ID
- -
1.5 50
pF nA
Module Optical Crosstalk (see note 2) Backreflection (Return Loss) @ in=1310nm Backreflection (Return Loss) @ in=1550nm
Symbol CRT - -
Value < - 47 <-6 < - 20
Unit dB dB dB
Note 1:
The tracking error TE is the variation rate of Popt at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon (T = 25 C, Popt = 1 mW). Thus, TE is given by: TE [dB ] = 10 x log Popt[Tc ]- Popt [25C ] Popt [25C ]
Siemens Semiconductors
page(3/5)
1998-08-21
SBH52414x FSAN
Note 2:
Optical Crosstalk is defined as CRT = 10 x log(P2/P1) with: P1 = Popt = 1 mW with no optical input power Pport and P2 the necessary optical input power Pport at = 1550 nm to get for Popt = 0 the same receiver signal level as before (VR = 2 V).
Accompanying Information T = 25 C: T = 85 C: Threshold current, slope eficiency, monitor current for 1 mW output power, peak wavelength for 1 mW output power. Threshold current, slope efficiency
Pigtail
Fiber Pigtail, Single Mode, Silica Mode field diameter Cladding diameter Mode field/cladding concentricity error Cladding non-circularity Mode field non-circularity Cut-off wavelength Jacket diameter Bending radius Tensile strength fiber/case Length
Min 8 123 - - - 1250 0.8 30 5 0.8
Max 10 127 1 2 6 - 1.0 - - 1.2
Unit m m m % % nm mm mm N m
Connector all standard connectors like FC/PC, SC, SC APC, available
Siemens Semiconductors
page(4/5)
1998-08-21
SBH52414x FSAN
Schematic Package Outline and Pinning
BIDI
Pigtail
1 4 3 2 1 3 2 Receiver
Transmitter
Transmitter 1 LK 2 Case 3 MK, LA 4 MA
Receiver 1 Photodiode K 2 Gnd, Case 3 Photodiode A
Siemens Semiconductors
page(5/5)
1998-08-21


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